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RD48F4000P0ZBQ0 PDF预览

RD48F4000P0ZBQ0

更新时间: 2024-11-14 12:28:31
品牌 Logo 应用领域
镁光 - MICRON 存储
页数 文件大小 规格书
97页 1233K
描述
Numonyx StrataFlash Embedded Memory

RD48F4000P0ZBQ0 数据手册

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®
Numonyx™ StrataFlash Embedded Memory  
(P30)  
Datasheet  
Product Features  
„ High performance  
„ Security  
— One-Time Programmable Registers:  
— 85 ns initial access  
• 64 unique factory device identifier bits  
• 2112 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• Four pre-defined 128-KByte blocks (top or bottom  
configuration)  
— 52 MHz with zero wait states, 17ns clock-to-data output  
synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/  
byte (Typ)  
• Up to Full Array OTP Lockout  
— Absolute write protection: V = V  
PP  
SS  
— 1.8 V buffered programming at 7 μs/byte (Typ)  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
„ Architecture  
— Multi-Level Cell Technology: Highest Density at Lowest  
Cost  
„ Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or bottom  
configuration  
— 20 μs (Typ) program suspend  
— 20 μs (Typ) erase suspend  
— Numonyx™ Flash Data Integrator optimized  
— Basic Command Set and Extended Command Set  
compatible  
— 128-KByte main blocks  
„ Voltage and Power  
— V (core) voltage: 1.7 V – 2.0 V  
CC  
— Common Flash Interface capable  
— V  
(I/O) voltage: 1.7 V – 3.6 V  
CCQ  
„ Density and Packaging  
— Standby current: 20μA (Typ) for 64-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— 56- Lead TSOP package (64, 128, 256,  
512- Mbit)  
— 64- Ball Numonyx™ Easy BGA package (64,  
128, 256, 512- Mbit)  
— Numonyx™ QUAD+ SCSP (64, 128, 256,  
512- Mbit)  
„ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology  
— 16-bit wide data bus  
306666-12  
August 2008  

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