Datasheet > RD48F4P0VTQ0

RD48F4P0VTQ0

更新时间： 2024-02-19 01:24:27

品牌	Logo	应用领域
英特尔 - INTEL		存储
页数	文件大小	规格书
102页	1616K
描述
Intel StrataFlash Embedded Memory

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RD48F4P0VTQ0 数据手册

Intel StrataFlash Embedded Memory

(P30)

1-Gbit P30 Family

Datasheet

Product Features

■ High performance

■ Security

— One-Time Programmable Registers:

— 85/88 ns initial access

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• 4x32KB parameter blocks + 3x128KB main

blocks (top or bottom configuration)

— Absolute write protection: V_PP= V_SS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 40 MHz with zero wait states, 20 ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— 1.8 V buffered programming at 7 µs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

■ Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel^®Flash Data Integrator optimized

— Basic Command Set and Extended Command

Set compatible

— 128-KByte main blocks

■ Voltage and Power

— V_CC(core) voltage: 1.7 V – 2.0 V

— V_CCQ(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP

package

— 64/128/256/512-Mbit densities in 64-Ball

Intel® Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in

Intel® QUAD+ SCSP

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

• 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (130 nm)

— 16-bit wide data bus

The Intel StrataFlash^®Embedded Memory (P30) product is the latest generation of Intel

StrataFlash^®memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device

brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.

Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options, and three

industry standard package choices.

The P30 product family is manufactured using Intel^®130 nm ETOX™ VIII process technology.

Order Number: 306666, Revision: 001

April 2005

12 3 4 5 6 7...102

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与RD48F4P0VTQ0相关器件

型号	品牌	获取价格	描述	数据表
RD48F4P0ZB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD4R00X	PANASONIC	获取价格	Electric Fuse, Fast Blow, 4A, 32VDC, 35A (IR), Surface Mount,
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RD4UB80	YANGJIE	获取价格	D3K
RD4V3	YEASHIN	获取价格	500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators
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