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RD48F4400P0VTQ0 PDF预览

RD48F4400P0VTQ0

更新时间： 2024-01-05 00:07:00
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路
页数 文件大小 规格书
102页 1616K
描述
Intel StrataFlash Embedded Memory

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中文翻译

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RD48F4400P0VTQ0 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：8 X 11 MM, 1.20 MM HEIGHT, SCSP-88针数：88
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.54
Is Samacsys：N最长访问时间：88 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块：TOP
JESD-30 代码：R-PBGA-B88长度：11 mm
内存密度：536870912 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：88字数：33554432 words
字数代码：32000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：1.8 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：2 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

RD48F4400P0VTQ0 数据手册

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®
Intel StrataFlash Embedded Memory  
(P30)  
1-Gbit P30 Family  
Datasheet  
Product Features  
■ High performance  
■ Security  
— One-Time Programmable Registers:  
— 85/88 ns initial access  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• 4x32KB parameter blocks + 3x128KB main  
blocks (top or bottom configuration)  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 40 MHz with zero wait states, 20 ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— 1.8 V buffered programming at 7 µs/byte (Typ)  
■ Architecture  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
■ Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Intel® Flash Data Integrator optimized  
— Basic Command Set and Extended Command  
Set compatible  
— 128-KByte main blocks  
■ Voltage and Power  
— VCC (core) voltage: 1.7 V – 2.0 V  
— VCCQ (I/O) voltage: 1.7 V – 3.6 V  
— Standby current: 55 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— Common Flash Interface capable  
■ Density and Packaging  
— 64/128/256-Mbit densities in 56-Lead TSOP  
package  
— 64/128/256/512-Mbit densities in 64-Ball  
Intel® Easy BGA package  
— 64/128/256/512-Mbit and 1-Gbit densities in  
Intel® QUAD+ SCSP  
■ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
• 1-Gbit in SCSP is –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (130 nm)  
— 16-bit wide data bus  
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel  
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device  
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.  
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR  
device, and support for code and data storage. Features include high-performance synchronous-  
burst read mode, fast asynchronous access times, low power, flexible security options, and three  
industry standard package choices.  
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.  
Order Number: 306666, Revision: 001  
April 2005  
1234567...102

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RD48F4400P0VTQ0 替代型号

型号 品牌 替代类型 描述 数据表
PF48F4400P0VTQ0 INTEL

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