Datasheet > RD48F4400P0VBQ0

RD48F4400P0VBQ0

更新时间： 2024-02-13 09:55:29

品牌	Logo	应用领域
英特尔 - INTEL		存储
页数	文件大小	规格书
102页	1616K
描述
Intel StrataFlash Embedded Memory

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中文翻译

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技术参数
数据手册

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RD48F4400P0VBQ0 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
最长访问时间：	85 ns	启动块：	BOTTOM
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	NO	JESD-30 代码：	R-PBGA-B88
内存密度：	536870912 bit	内存集成电路类型：	FLASH
内存宽度：	16	部门数/规模：	8, 510
端子数量：	88	字数：	33554432 words
字数代码：	32000000	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	32MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA88,8X12,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	页面大小：	4 words
并行/串行：	PARALLEL	电源：	1.8,1.8/3.3 V
认证状态：	Not Qualified	部门规模：	16K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.051 mA	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	切换位：	NO
类型：	NOR TYPE	Base Number Matches：	1

RD48F4400P0VBQ0 数据手册

Intel StrataFlash Embedded Memory

(P30)

1-Gbit P30 Family

Datasheet

Product Features

■ High performance

■ Security

— One-Time Programmable Registers:

— 85/88 ns initial access

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• 4x32KB parameter blocks + 3x128KB main

blocks (top or bottom configuration)

— Absolute write protection: V_PP= V_SS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 40 MHz with zero wait states, 20 ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— 1.8 V buffered programming at 7 µs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

■ Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel^®Flash Data Integrator optimized

— Basic Command Set and Extended Command

Set compatible

— 128-KByte main blocks

■ Voltage and Power

— V_CC(core) voltage: 1.7 V – 2.0 V

— V_CCQ(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP

package

— 64/128/256/512-Mbit densities in 64-Ball

Intel® Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in

Intel® QUAD+ SCSP

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

• 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (130 nm)

— 16-bit wide data bus

The Intel StrataFlash^®Embedded Memory (P30) product is the latest generation of Intel

StrataFlash^®memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device

brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.

Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options, and three

industry standard package choices.

The P30 product family is manufactured using Intel^®130 nm ETOX™ VIII process technology.

Order Number: 306666, Revision: 001

April 2005

12 3 4 5 6 7...102

中文翻译

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与RD48F4400P0VBQ0相关器件

型号	品牌	获取价格	描述	数据表
RD48F4400P0VBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4400P0VBQ0B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4400P0VBQE	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
RD48F4400P0VBQE	NUMONYX	获取价格	Flash, 32MX16, 100ns, PBGA88, 8 X 11 MM, 1 MM HEIGHT, SCSP-88
RD48F4400P0VBQEA	NUMONYX	获取价格	Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, SCSP-88
RD48F4400P0VBQEA	MICRON	获取价格	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
RD48F4400P0VBQEJ	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
RD48F4400P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4400P0VTQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4444LVYBB0	INTEL	获取价格	Flash, 64MX16, 85ns, PBGA103, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-103

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