是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
风险等级: | 5.86 | Is Samacsys: | N |
最长访问时间: | 100 ns | 启动块: | BOTTOM/TOP |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B88 |
JESD-609代码: | e0 | 内存密度: | 536870912 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
部门数/规模: | 8, 510 | 端子数量: | 88 |
字数: | 33554432 words | 字数代码: | 32000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA88,8X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 235 |
电源: | 1.8,1.8/3.3 V | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 部门规模: | 16K,64K |
最大待机电流: | 0.00042 A | 子类别: | Flash Memories |
最大压摆率: | 0.031 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD SILVER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 切换位: | NO |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RD48F4400P0VBQ0 | INTEL |
获取价格 |
Intel StrataFlash Embedded Memory |
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RD48F4400P0VBQ0 | NUMONYX |
获取价格 |
Numonyx StrataFlash Embedded Memory |
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RD48F4400P0VBQ0A | MICRON |
获取价格 |
64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory |
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RD48F4400P0VBQ0B | MICRON |
获取价格 |
64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory |
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RD48F4400P0VBQE | MICRON |
获取价格 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm) |
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RD48F4400P0VBQE | NUMONYX |
获取价格 |
Flash, 32MX16, 100ns, PBGA88, 8 X 11 MM, 1 MM HEIGHT, SCSP-88 |
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RD48F4400P0VBQEA | NUMONYX |
获取价格 |
Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, SCSP-88 |
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RD48F4400P0VBQEA | MICRON |
获取价格 |
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage |
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RD48F4400P0VBQEJ | MICRON |
获取价格 |
256Mb and 512Mb (256Mb/256Mb), P30-65nm |
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RD48F4400P0VTQ0 | INTEL |
获取价格 |
Intel StrataFlash Embedded Memory |
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