Datasheet > RD48F4400P0VBQEA

RD48F4400P0VBQEA

更新时间： 2024-01-18 18:35:37

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
98页	1366K
描述
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage

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中文翻译

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RD48F4400P0VBQEA 数据手册

256Mb and 512Mb (256Mb/256Mb), P30-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P30-65nm)

JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,

RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– 100ns initial access for Easy BGA

– 110ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 1.8V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– V_CC(core) voltage: 1.7V to 2.0V

– V_CCQ(I/O) voltage: 1.7V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef84566799

p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与RD48F4400P0VBQEA相关器件

型号	品牌	获取价格	描述	数据表
RD48F4400P0VBQEJ	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
RD48F4400P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4400P0VTQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4444LVYBB0	INTEL	获取价格	Flash, 64MX16, 85ns, PBGA103, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-103
RD48F4444LVZTB0	NUMONYX	获取价格	Flash, 64MX16, 88ns, PBGA88, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-88
RD48F4444PPVBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4444PPVTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory

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