Datasheet > RD48F4444LVYBB0

RD48F4444LVYBB0

更新时间： 2024-01-03 18:23:46

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
58页	1219K
描述
Flash, 64MX16, 85ns, PBGA103, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-103

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RD48F4444LVYBB0 数据手册

Intel StrataFlash^Wireless Memory

System (LV18 SCSP)

1024-Mbit LVX Family with LPSDRAM

Datasheet

Product Features

■ Device Memory Architecture

■ Code Segment Flash Read Performance

—85 ns initial access

—Flash die density: 128-, 256-Mbit

—LPSDRAM die density: 128-, 256-Mbit

—25 ns Asynchronous Page read

—Top or Bottom parameter flash

configuration

—14 ns Synchronous read (t_CHQV

—54 MHz (max.) CLK

)

■ Device Voltage

■ Data Segment Flash Performance

—170 ns initial access

—Core: V_CC= 1.8 V (typ.)

—I/O: V_CCQ= 1.8 V (typ.)

—55 ns Asynchronous Page read

■ Code Segment Flash Architecture

—Hardware Read-While-Write/Erase

—Multiple 8-Mbit / 16-Mbit partition sizes

■ Device Common Performance

—Buffered EFP: 5µs / Byte (typ.) per die

—Buffer Program: 7µs / Byte (typ.) per die

—Concurrent Buffered EFP:

—2-Kbit One-Time-Programmable

Protection Register

6.4-Mbps effective with 4 flash dies

■ Device Common Architecture

■ Data Segment Flash Architecture

—Software Read-While-Write/Erase

—Single partition size die

—Asymmetrical blocking structure

—16-KWord parameter blocks (Top or

Bottom); 64-KWord main blocks

■ Flash Software

—Zero-latency block locking

—Intel^FDI, Intel^PSM, and Intel^

VFM

—Absolute write protection with block

lock down using F-VPP and F-WP#

—Common Flash Interface

■ Device Packaging

—Basic/Extended Command Set

—103 active balls; 9 x 12 ball matrix

—Area: 9 x 11 mm to 11 x 11 mm

—Height: 1.4 mm

■ Quality and Reliability

—Extended temperature: –25 °C to +85 °C

—Minimum 100 K flash block erase cycle

—0.13 µm ETOX VIII flash technology

■ SDRAM Architecture and Performance

—Clock rate: 105 MHz

—Four internal banks

—Burst Length: 1, 2, 4, 8, or full page

Intel StrataFlash^®Wireless Memory System (LV18 SCSP) with Low-Power SDRAM (LVX

family) offers a variety of high performance code segment, large embedded data segment, and

low-power SDRAM combinations in a common package on 0.13 µm ETOX™ VIII flash

technology. The LVX family integrates up to two code segment flash dies, two data segment flash

dies, and two low-power SDRAM dies or one SRAM die in a common x16D Performance ballout.

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the

latest datasheet before finalizing a design.

300945-006

October 2004

12 3 4 5 6 7...58

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与RD48F4444LVYBB0相关器件

型号	品牌	获取价格	描述	数据表
RD48F4444LVZTB0	NUMONYX	获取价格	Flash, 64MX16, 88ns, PBGA88, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-88
RD48F4444PPVBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4444PPVTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4P0ZT00	INTEL	获取价格	Intel StrataFlash Embedded Memory

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