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PSMN013-100PS,127 PDF预览

PSMN013-100PS,127

更新时间: 2024-02-12 00:39:41
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 224K
描述
PSMN013-100PS - N-channel 100V 13.9mΩ standard level MOSFET in TO220. TO-220 3-Pin

PSMN013-100PS,127 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
针数:3Reach Compliance Code:not_compliant
风险等级:5.74Base Number Matches:1

PSMN013-100PS,127 数据手册

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PSMN013-100PS  
N-channel 100V 13.9mΩ standard level MOSFET in TO220.  
10 August 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
1.2 Features and benefits  
High efficiency due to low switching and conduction losses  
Improved dynamic avalanche performance  
Suitable for standard level gate drive  
1.3 Applications  
DC-to-DC converters  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
68  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tmb = 25 °C; VGS = 10 V; Fig. 1  
-
-
-
-
-
[1]  
-
A
Ptot  
Tj  
total power dissipation Tmb = 25 °C; Fig. 2  
junction temperature  
-
170  
175  
W
-55  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 15 A; Tj = 100 °C;  
Fig. 12  
-
-
19.4  
10.8  
25  
mΩ  
mΩ  
VGS = 10 V; ID = 15 A; Tj = 25 °C;  
Fig. 13  
[2]  
13.9  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A; VDS = 50 V;  
Fig. 15; Fig. 14  
-
17  
-
nC  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 

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