Datasheet > PMV50UPE,215

PMV50UPE,215

更新时间： 2024-09-16 22:56:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	721K
描述
MOSFET P-CH 20V 3.2A TO-236AB

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中文翻译

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数据手册

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PMV50UPE,215 数据手册

PMV50UPE

20 V, single P-channel Trench MOSFET

20 July 2012

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

3 kV ESD protected

Trench MOSFET technology

Low threshold voltage

•

1.3 Applications

Relay driver

High-side loadswitch

Switching circuits

•

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -3.2 A; T_j= 25 °C

[1]

-3.7

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...14

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