Datasheet > PMV65XP

PMV65XP

更新时间： 2024-09-16 12:30:59

品牌	Logo	应用领域
TYSEMI		晶体电池晶体管开关光电二极管
页数	文件大小	规格书
4页	550K
描述
20 V, single P-channel Trench MOSFET Low threshold voltage Battery management

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PMV65XP 数据手册

Product specification

PMV65XP

20 V, single P-channel Trench MOSFET

12 February 2013

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Low threshold voltage

Low on-state resistance

Trench MOSFET technology

•

3. Applications

Low power DC-to-DC converters

Load switching

Battery management

•

Battery powered portable equipment

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-12

V_GS= -4.5 V; T_sp= 25 °C

-4.3

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -2.8 A; T_j= 25 °C

mΩ

http://www.twtysemi.com

sales@twtysemi.com

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