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PMV50UPEVL PDF预览

PMV50UPEVL

更新时间: 2024-11-05 22:56:47
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
14页 721K
描述
MOSFET P-CH 20V 3.7A TO236AB

PMV50UPEVL 数据手册

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PMV50UPE  
20 V, single P-channel Trench MOSFET  
20 July 2012  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23  
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET  
technology.  
1.2 Features and benefits  
3 kV ESD protected  
Trench MOSFET technology  
Low threshold voltage  
1.3 Applications  
Relay driver  
High-side loadswitch  
Switching circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
-20  
8
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-8  
-
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s  
VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C  
[1]  
-3.7  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
-
50  
66  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
drain 6 cm2.  
 
 
 
 
 
 

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