Datasheet > PMV52ENE

PMV52ENE

更新时间： 2024-11-07 11:16:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	263K
描述
30 V, N-channel Trench MOSFETProduction

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PMV52ENE 数据手册

PMV52ENE

30 V, N-channel Trench MOSFET

29 November 2021

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted

Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Extended temperature range T_j= 175 °C

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

3.2

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 3.2 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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