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PMV65UNE PDF预览

PMV65UNE

更新时间: 2024-11-07 11:13:23
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
15页 716K
描述
20 V, N-channel Trench MOSFETProduction

PMV65UNE 数据手册

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PMV65UNE  
20 V, N-channel Trench MOSFET  
22 April 2016  
Product data sheet  
1. General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23  
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET  
technology.  
2. Features and benefits  
Trench MOSFET technology  
Low threshold voltage  
Enhanced power dissipation capability of 940 mW  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
3. Applications  
LED driver  
Power management  
Low-side loadswitch  
Switching circuits  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
Unit  
V
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-8  
-
8
V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s  
VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C  
[1]  
3.4  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
-
63  
73  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
drain 6 cm2.  
 
 
 
 
 

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