Datasheet > PMV65UNE

PMV65UNE

更新时间： 2024-11-10 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	716K
描述
20 V, N-channel Trench MOSFETProduction

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PMV65UNE 数据手册

PMV65UNE

20 V, N-channel Trench MOSFET

22 April 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Trench MOSFET technology

Low threshold voltage

Enhanced power dissipation capability of 940 mW

ElectroStatic Discharge (ESD) protection > 2 kV HBM

•

3. Applications

LED driver

•

Power management

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 2.8 A; T_j= 25 °C

[1]

3.4

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...15

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