Datasheet > PMV65UNEA

PMV65UNEA

更新时间： 2024-11-10 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	252K
描述
20 V, N-channel Trench MOSFETProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PMV65UNEA 数据手册

PMV65UNEA

20 V, N-channel Trench MOSFET

17 March 2017

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

Low threshold voltage

Enhanced power dissipation capability of 940 mW

ElectroStatic Discharge (ESD) protection > 2KV HBM

AEC-Q101 qualified

3. Applications

•

LED driver

Power management

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

T_j= 25 °C; T_amb= 25 °C

V_GS= 4.5 V; T_amb= 25 °C

-8

I_D

[1]

2.8

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 2.8 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

中文翻译

下载PDF

与PMV65UNEA相关器件

型号	品牌	获取价格	描述	数据表
PMV65XP	TYSEMI	获取价格	20 V, single P-channel Trench MOSFET Low threshold voltage Battery management
PMV65XP	NXP	获取价格	P-channel TrenchMOS extremely low level FET
PMV65XP	NEXPERIA	获取价格	20 V, single P-channel Trench MOSFETProduction
PMV65XP,215	NXP	获取价格	PMV65XP - 20 V, single P-channel Trench MOSFET TO-236 3-Pin
PMV65XP/MIR	NXP	获取价格	PMV65XP - 20 V, single P-channel Trench MOSFET TO-236 3-Pin
PMV65XPE	NXP	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
PMV65XPE	NEXPERIA	获取价格	20 V, P-channel Trench MOSFETProduction
PMV65XPEA	NXP	获取价格	SMALL SIGNAL, FET
PMV65XPEA	NEXPERIA	获取价格	20 V, P-channel Trench MOSFETProduction
PMV6DW1BBLK	E-SWITCH	获取价格	Product Search