Datasheet > PMV65UN

PMV65UN

更新时间： 2024-11-06 12:30:59

品牌	Logo	应用领域
TYSEMI		驱动器继电器
页数	文件大小	规格书
4页	491K
描述
20 V, single N-channel Trench MOSFET Low threshold voltage Relay driver

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PMV65UN 数据手册

Product specification

PMV65UN

20 V, single N-channel Trench MOSFET

13 November 2012

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Low threshold voltage

Very fast switching

Trench MOSFET technology

•

1.3 Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_amb= 25 °C

-8

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 2 A; T_j= 25 °C

[1]

2.2

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

http://www.twtysemi.com

sales@twtysemi.com

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