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PMEG3005ELD,315 PDF预览

PMEG3005ELD,315

更新时间: 2024-09-14 19:58:51
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
14页 753K
描述
PMEG3005ELD - 0.5 A low V_F MEGA Schottky barrier rectifier DFN 2-Pin

PMEG3005ELD,315 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:7.98配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.18 VJESD-30 代码:R-PDSO-N2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:3 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.34 W最大重复峰值反向电压:30 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

PMEG3005ELD,315 数据手册

 浏览型号PMEG3005ELD,315的Datasheet PDF文件第2页浏览型号PMEG3005ELD,315的Datasheet PDF文件第3页浏览型号PMEG3005ELD,315的Datasheet PDF文件第4页浏览型号PMEG3005ELD,315的Datasheet PDF文件第5页浏览型号PMEG3005ELD,315的Datasheet PDF文件第6页浏览型号PMEG3005ELD,315的Datasheet PDF文件第7页 
PMEG3005ELD  
0.5 A low VF MEGA Schottky barrier rectifier  
Rev. 1 — 12 April 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra  
small Surface-Mounted Device (SMD) plastic package with visible and solderable side  
pads.  
1.2 Features and benefits  
„ Forward current: IF 0.5 A  
„ Reverse voltage: VR 30 V  
„ Low forward voltage: VF 500 mV  
„ AEC-Q101 qualified  
„ Ultra small and leadless SMD plastic package  
„ Solderable side pads  
„ Package height typ. 0.37 mm  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switch mode power supply  
„ Reverse polarity protection  
„ Low power consumption applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
IF(AV)  
average forward  
square wave; δ = 0.5;  
current  
f = 20 kHz  
[1]  
[2]  
Tamb 75 °C  
Tsp 130 °C  
VR = 10 V  
-
-
-
-
-
-
0.5  
0.5  
200  
30  
A
-
A
IR  
reverse current  
reverse voltage  
forward voltage  
15  
-
μA  
V
VR  
VF  
IF = 500 mA  
450  
500  
mV  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
 

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