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PDM4M4110S20Z PDF预览

PDM4M4110S20Z

更新时间: 2024-10-28 20:50:07
品牌 Logo 应用领域
IXYS 静态存储器内存集成电路
页数 文件大小 规格书
10页 215K
描述
SRAM Module, 512KX32, 20ns, CMOS, ZIP-72

PDM4M4110S20Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:ZIP
包装说明:ZIP-72针数:72
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.65
最长访问时间:20 nsJESD-30 代码:R-XZMA-T72
内存密度:16777216 bit内存集成电路类型:SRAM MODULE
内存宽度:32功能数量:1
端子数量:72字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX32封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子位置:ZIG-ZAG处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PDM4M4110S20Z 数据手册

 浏览型号PDM4M4110S20Z的Datasheet PDF文件第1页浏览型号PDM4M4110S20Z的Datasheet PDF文件第2页浏览型号PDM4M4110S20Z的Datasheet PDF文件第3页浏览型号PDM4M4110S20Z的Datasheet PDF文件第5页浏览型号PDM4M4110S20Z的Datasheet PDF文件第6页浏览型号PDM4M4110S20Z的Datasheet PDF文件第7页 
PRELIMINARY  
PDM4M4110  
DC Electrical Characteristics (V = 5.0V ± 10%, T = 0°C to +70°C)  
CC  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Unit  
I
I
I
Input Leakage Current  
(Address and Control)  
V
V
V
= Max.,V = V to V  
CC  
40  
µA  
LI  
CC  
IN  
SS  
Input Leakage Current  
(Data)  
= Max., V = V to V  
CC  
10  
10  
µA  
µA  
LI  
CC  
IN  
SS  
Output Leakage Current  
= V to V , V = Max.,  
SS CC CC  
LO  
OUT  
CS = V  
IH  
V
V
V
V
Output Low Voltage  
Output High Voltage  
Input High Voltage  
Input Low Voltage  
I
I
= 8 mA, V = Min.  
0.4  
V
V
V
V
OL  
OH  
IH  
OL  
OL  
CC  
= –4 mA, V = Min.  
2.4  
2.2  
CC  
6.0  
0.8  
(1)  
–0.5  
IL  
NOTE 1. V = –2.0V for pulse widths less than 10 ns, once per cycle.  
IL  
Power Supply Characteristics  
(1)  
Symbol  
Parameter  
Max  
Unit  
I
I
I
Operating Current  
680  
160  
60  
mA  
CC  
CS = V , V = Max., f = f , Outputs Open  
IL  
CC  
MAX  
Standby Current  
CS V , V = Max., f = f , Outputs Open  
MAX  
mA  
mA  
SB  
IH  
CC  
Full Standby Current CS V – 0.2V,  
SB1  
CC  
f = 0, V > V – 0.2V or < 0.2V  
IN  
CC  
NOTE 1. Preliminary specification only.  
Capacitance(1) (T = +25°C, f = 1.0 MHz)  
A
Symbol  
Parameter  
Input Capacitance, (Data) V = 0V  
Max.  
Unit  
C
C
C
12  
40  
12  
pF  
pF  
pF  
IN(D)  
IN(A)  
OUT  
IN  
Input Capacitance, (Address and Control) V = 0V  
IN  
Input Capacitance, V  
= 0V  
OUT  
NOTE 1. This parameter is determined by device characteristics but is not production tested.  
Rev 2.3

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