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PBSS4330PA,115 PDF预览

PBSS4330PA,115

更新时间: 2024-01-30 04:16:33
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 143K
描述
PBSS4330PA - 30 V, 3 A NPN low VCEsat (BISS) transistor DFN 3-Pin

PBSS4330PA,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN针数:3
Reach Compliance Code:compliant风险等级:5.59
Base Number Matches:1

PBSS4330PA,115 数据手册

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PBSS4330PA  
30 V, 3 A NPN low VCEsat (BISS) transistor  
Rev. 01 — 19 April 2010  
Product data sheet  
1. Product profile  
1.1 General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra  
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with  
medium power capability.  
PNP complement: PBSS5330PA.  
1.2 Features and benefits  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
„ Exposed heat sink for excellent thermal and electrical conductivity  
„ Leadless small SMD plastic package with medium power capability  
1.3 Applications  
„ Loadswitch  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VCEO collector-emitter voltage  
IC  
Quick reference data  
Conditions  
Min  
Typ  
Max  
30  
3
Unit  
V
open base  
-
-
-
-
-
-
collector current  
A
ICM  
peak collector current  
single pulse;  
5
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 3 A;  
-
75  
100  
mΩ  
saturation resistance  
IB = 300 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 

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