Datasheet > PBSS4330PAS

PBSS4330PAS

更新时间： 2024-01-11 00:20:05

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
18页	248K
描述
SMALL SIGNAL TRANSISTOR

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PBSS4330PAS 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

PBSS4330PAS 数据手册

PBSS4330PAS

30 V, 3 A NPN low VCEsat (BISS) transistor

11 September 2014

Product data sheet

1. General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

2. Features and benefits

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

•

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

High temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) area requirements

Leadless small SMD plastic package with soldarable side pads

Exposed heat sink for excellent thermal and electrical conductivity

Suitable for Automatic Optical Inspection (AOI) of solder joint

AEC-Q101 qualified

3. Applications

Loadswitch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 3 A; I_B= 300 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

100

mΩ

saturation resistance

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