Datasheet > PBSS4350T-Q

PBSS4350T-Q

更新时间： 2024-11-19 11:12:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	225K
描述
50 V; 3 A NPN low VCEsat transistorProduction

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PBSS4350T-Q 数据手册

PBSS4350T-Q

50 V; 3 A NPN low VCEsat transistor

10 May 2022

Product data sheet

1. General description

NPN low V_CEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

PNP complement: PBSS5350T-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsatand corresponding low R_CEsat

•

High collector current capability

High collector current gain

Improved efficiency due to reduced heat generation.

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Power management applications

Low and medium power DC/DC converters

Supply line switching

Battery chargers

Linear voltage regulation with low voltage drop-out (LDO).

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 2 A; I_B= 200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

100

130

mΩ

12 3 4 5 6 7...12

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