Datasheet > PBSS4330PAS-Q

PBSS4330PAS-Q

更新时间： 2023-09-03 20:33:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	289K
描述
30 V, 3 A NPN low VCEsat transistorProduction

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PBSS4330PAS-Q 数据手册

PBSS4330PAS-Q

30 V, 3 A NPN low VCEsat transistor

29 July 2022

Product data sheet

1. General description

NPN low V_CEsattransistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small

Surface-Mounted Device (SMD) plastic package with medium power capability and visible and

soldarable side pads.

PNP complement: PBSS5330PAS

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

High temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) area requirements

Leadless small SMD plastic package with soldarable side pads

Exposed heat sink for excellent thermal and electrical conductivity

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 3 A; I_B= 300 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

100

mΩ

12 3 4 5 6 7...15

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