PBSS4350SS

更新时间： 2024-02-16 04:24:48

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
14页	101K
描述
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

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技术参数
数据手册

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PBSS4350SS 技术参数

生命周期：	Obsolete	零件包装代码：	SC-73
包装说明：	PLASTIC, SC-73, 4 PIN	针数：	4
Reach Compliance Code：	compliant	风险等级：	5.78
Base Number Matches：	1

PBSS4350SS 数据手册

PBSS5350SS

50 V, 2.7 A PNP/PNP low V_CEsat(BISS) transistor

Rev. 01 — 3 April 2007

Product data sheet

1. Product proﬁle

1.1 General description

PNP/PNP double low V_CEsatBreakthrough In Small Signal (BISS) transistor in a medium

power Surface-Mounted Device (SMD) plastic package.

Table 1.

Product overview

Type number

Package

NXP

NPN/PNP

complement

NPN/NPN

complement

Name

PBSS5350SS

SOT96-1

SO8

PBSS4350SPN

PBSS4350SS

1.2 Features

I Low collector-emitter saturation voltage V_CEsat

I High collector current capability I_Cand I_CM

I High collector current gain (h_FE) at high I_C

I High efﬁciency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I Dual low power switches (e.g. motors, fans)

I Automotive

1.4 Quick reference data

Table 2.

Quick reference data

Symbol Parameter

Per transistor

Conditions

Min

Typ

Max

Unit

V_CEO

I_C

collector-emitter voltage open base

collector current

−50

−2.7

−5

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= −2 A;

140

mΩ

saturation resistance

I_B= −200 mA

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

12 3 4 5 6 7...14

中文翻译

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