Datasheet > PBSS4140T-Q

PBSS4140T-Q

更新时间： 2024-09-30 11:13:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	205K
描述
40 V, 1 A NPN low VCEsat (BISS) transistorProduction

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PBSS4140T-Q 数据手册

PBSS4140T-Q

40 V, 1 A NPN low VCEsat (BISS) transistor

15 December 2021

Product data sheet

1. General description

NPN low V_CEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q.

2. Features and benefits

•

Low collector-emitter saturation voltage

•

High current capabilities

Improved device reliability due to reduced heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and muting

LCD backlighting

Supply line switching circuits

Battery driven equipment (mobile phones, video cameras and hand-held devices).

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 500 mA; I_B= 50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

260

500

mΩ

saturation resistance

12 3 4 5 6 7...11

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