Datasheet > NX3008CBKS

NX3008CBKS

更新时间： 2024-09-28 11:10:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
21页	2329K
描述
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFETProduction

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NX3008CBKS 数据手册

NX3008CBKS

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Rev. 1 — 29 July 2011

Product data sheet

1. Product profile

1.1 General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very

small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 ESD protection up to 2 kV

 AEC-Q101 qualified

 Trench MOSFET technology

1.3 Applications

 Level shifter

 Load switch

 Power supply converter

 Switching circuits

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage T_j= 25 °C

gate-source voltage

-30

-8

[1]

drain current

V_GS= -4.5 V; T_amb= 25 °C

-200 mA

TR1 (N-channel)

V_DS

V_GS

I_D

drain-source voltage T_j= 25 °C

gate-source voltage

drain current

-8

V_GS= 4.5 V; T_amb= 25 °C

350

TR1 (N-channel), Static characteristics

R_DSondrain-source on-state V_GS= 4.5 V; I_D= 350 mA;

resistance T_j= 25 °C

TR2 (P-channel), Static characteristics

R_DSondrain-source on-state V_GS= -4.5 V;

resistance I_D= -200 mA; T_j= 25 °C

1.4

4.1

Ω

2.8

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...21

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