Datasheet > NX3008PBKV

NX3008PBKV

更新时间： 2024-09-28 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	246K
描述
30 V, 220 mA dual P-channel Trench MOSFETProduction

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NX3008PBKV 数据手册

NX3008PBKV

30 V, 220 mA dual P-channel Trench MOSFET

28 December 2022

Product data sheet

1. General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead

SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Very fast switching

•

Low threshold voltage

Trench MOSFET technology

ESD protection up to 2 kV

3. Applications

•

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-30

-8

V_GS= -4.5 V; T_amb= 25 °C

V_GS= -4.5 V; I_D= -200 mA; T_j= 25 °C

[1]

-220

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

2.8

4.1

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...14

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