Datasheet > NX3020NAK

NX3020NAK

更新时间： 2024-09-28 11:14:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	713K
描述
30 V, single N-channel Trench MOSFETProduction

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NX3020NAK 数据手册

NX3020NAK

30 V, single N-channel Trench MOSFET

29 October 2013

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Very fast switching

Trench MOSFET technology

ESD protection

•

Low threshold voltage

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C

[1]

200

Static characteristics

R_DSondrain-source on-state

V_GS= 10 V; I_D= 100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_j= 25 °C

2.7

4.5

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

[1]

12 3 4 5 6 7...15

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