Datasheet > NX3020NAKV

NX3020NAKV

更新时间： 2024-09-28 11:11:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	261K
描述
30 V, 200 mA dual N-channel Trench MOSFETProduction

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NX3020NAKV 数据手册

NX3020NAKV

30 V, 200 mA dual N-channel Trench MOSFET

28 December 2022

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead

SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Very fast switching

•

Trench MOSFET technology

ESD protection

Low threshold voltage

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 10 V; I_D= 100 mA; T_j= 25 °C

[1]

200

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

2.7

4.5

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...14

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