Datasheet > NX3008NBKV,115

NX3008NBKV,115

更新时间： 2024-09-27 15:46:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	837K
描述
NX3008NBKV - 30 V, 400 mA dual N-channel Trench MOSFET SOT 6-Pin

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技术参数
数据手册

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NX3008NBKV,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT
针数：	6	Reach Compliance Code：	compliant
风险等级：	8.56	Base Number Matches：	1

NX3008NBKV,115 数据手册

NX3008NBKV

T666

30 V, 400 mA dual N-channel Trench MOSFET

Rev. 1 — 1 August 2011

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat

lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Very fast switching

 ESD protection up to 2 kV

 AEC-Q101 qualified

 Low threshold voltage

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

[1]

V_GS= 4.5 V; T_amb= 25 °C

400 mA

Static characteristics (per transistor)

R_DSondrain-source on-state V_GS= 4.5 V; I_D= 350 mA;

resistance T_j= 25 °C

1.4

Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm².

12 3 4 5 6 7...17

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