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NX3008PBKMB

更新时间： 2024-09-27 12:32:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	1058K
描述
30 V, single P-channel Trench MOSFET

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NX3008PBKMB 数据手册

NX3008PBKMB

SOT883B

30 V, single P-channel Trench MOSFET

Rev. 1 — 11 May 2012

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 ESD protection up to 2 kV

 Low threshold voltage

 Trench MOSFET technology

 Ultra thin package profile with

0.37 mm height

1.3 Applications

 Relay driver

 High-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

[1]

I_D

V_GS= -4.5 V; T_amb= 25 °C

-300

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -200 mA; T_j= 25 °C

2.8

4.1

Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...15

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