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NX3008NBKS PDF预览

NX3008NBKS

更新时间: 2024-09-28 18:09:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
7页 439K
描述
Dual N-Channel MOSFET

NX3008NBKS 数据手册

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SMD Type  
MOSFET  
Dual N-channel Trench MOSFET  
NX3008NBKS  
Features  
VDS (V) = 30V  
ID = 350mA  
RDS(ON) < 1.4@ VGS = 4.5V  
Very fast switching  
Low threshold voltage  
Trench MOSFET technology  
ESD protection up to 2 kV  
D2  
D1  
1 S1 4 S2  
2 G1 5 G2  
3 D2 6 D1  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings (T = 25, unless otherwise specified)  
J
Parameter  
Symbol  
Rating  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
±8  
250  
T
T
a
a
= 25℃  
Continuous Drain Current (Note 1)  
I
D
mA  
230  
= 100℃  
Pulsed Drain Current (Single pulse; tp10µs)  
Source Current  
I
DM  
1.4  
A
mA  
V
I
S
300  
Electrostatic Discharge Voltage HBM (Note 3)  
V
ESD  
2000  
280  
T
T
T
T
a
a
= 25(Note 2)  
= 25(Note 1)  
Per Transistor Total Power Dissipation  
320  
P
tot  
mW  
990  
sp = 25℃  
= 25(Note 2)  
Per Device Total Power Dissipation  
445  
a
(Note 2)  
(Note 1)  
445  
Per transistor Thermal Resistance.  
Junction- to-Ambient  
R
th(j-a)  
390  
K/W  
Thermal Resistance.Junction- to-Solder Point  
Rth(j-sp)  
130  
Per DeviceThermal Resistance. Junction- to-Ambient  
Junction Temperature  
R
th(j-a)  
300  
T
J
150  
Storage Temperature Range  
T
stg  
-65 to 150  
Notes: 1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
2. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
3. Measured between all pins.  
1
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