Datasheet > NX3008NBKT

NX3008NBKT

更新时间： 2024-09-28 01:19:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	874K
描述
30 V, 350 mA N-channel Trench MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NX3008NBKT 数据手册

NX3008NBKT

T416

30 V, 350 mA N-channel Trench MOSFET

Rev. 1 — 1 August 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 ESD protection up to 2 kV

 AEC-Q101 qualified

 Low threshold voltage

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

[1]

I_D

V_GS= 4.5 V;

T_amb= 25 °C

350

Static characteristics

R_DSondrain-source on-state V_GS= 4.5 V;I_D= 350 mA;

resistance T_j= 25 °C

1.4

Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...16

中文翻译

下载PDF

与NX3008NBKT相关器件

型号	品牌	获取价格	描述	数据表
NX3008NBKT-115	NXP	获取价格	30 V, 350 mA N-channel Trench MOSFET
NX3008NBKV	NXP	获取价格	30 V, 400 mA dual N-channel Trench MOSFET
NX3008NBKV	NEXPERIA	获取价格	30 V, 400 mA dual N-channel Trench MOSFETProduction
NX3008NBKV,115	NXP	获取价格	NX3008NBKV - 30 V, 400 mA dual N-channel Trench MOSFET SOT 6-Pin
NX3008NBKW	NEXPERIA	获取价格	30 V, 350 mA N-channel Trench MOSFETProduction
NX3008PBK	NXP	获取价格	30 V, 230 mA P-channel Trench MOSFET
NX3008PBK	NEXPERIA	获取价格	30 V, 230 mA P-channel Trench MOSFETProduction
NX3008PBK215	NXP	获取价格	30 V, 230 mA P-channel Trench MOSFET
NX3008PBKMB	NXP	获取价格	30 V, single P-channel Trench MOSFET
NX3008PBKMB,315	NXP	获取价格	暂无描述