Datasheet > NX3008CBKV

NX3008CBKV

更新时间： 2024-09-28 11:14:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
20页	305K
描述
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFETProduction

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NX3008CBKV 数据手册

NX3008CBKV

30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET

28 December 2022

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small

and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

ESD protection up to 2 kV

3. Applications

•

Level shifter

Power supply converter

Loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

V_DS

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= 4.5 V; T_amb= 25 °C

T_j= 25 °C

[1]

400

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

-30

-8

V_GS= -4.5 V; T_amb= 25 °C

V_GS= 4.5 V; I_D= 350 mA; T_j= 25 °C

-220

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

1.4

4.1

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -200 mA; T_j= 25 °C

2.8

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...20

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