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NVBG060N090SC1

更新时间： 2024-09-17 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 790K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L

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NVBG060N090SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 60 mohm, 900ꢀV,  
M2, D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
900 V  
84 mW @ 15 V  
44 A  
Drain  
(TAB)  
NVBG060N090SC1  
Features  
• Typ. R  
• Typ. R  
= 60 mW @ V = 15 V  
DS(on)  
DS(on)  
GS  
Gate  
(Pin 1)  
= 43 mW @ V = 18 V  
GS  
• Ultra Low Gate Charge (Q  
= 88 nC)  
G(tot)  
Driver  
Source  
(Pin 2)  
• High Speed Switching with Low Capacitance (C = 115 pF)  
oss  
Power Source  
(Pin 3, 4, 5, 6, 7)  
• 100% Avalanche Tested  
N−CHANNEL MOSFET  
• T = 175°C  
J
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC converter for EV/HEV  
D2PAK−7L  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
CASE 418BJ  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
V
DSS  
900  
V
V
V
Gate−to−Source Voltage  
V
GS  
+22/−8  
+15/−5  
AYWWZZ  
NVBG  
060090SC1  
Recommended Operation  
Values of Gate−to−Source  
T
< 175°C  
= 25°C  
V
GSop  
C
Continuous Drain  
Current (Note 2)  
Steady  
State  
T
I
D
44  
211  
5.8  
3.6  
176  
320  
A
W
A
C
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ = Lot Traceability  
Power Dissipation  
(Note 2)  
P
D
Continuous Drain  
Current (Notes 1, 2)  
Steady  
State  
T = 25°C  
I
D
A
NVBG060N090SC1 = Specific Device Code  
Power Dissipation  
(Notes 1, 2)  
Pulsed Drain Current  
(Note 3)  
P
D
W
A
T = 25°C  
I
DM  
A
ORDERING INFORMATION  
†
Single Pulse Surge  
Drain Current  
Capability (Note 4)  
T = 25°C, t = 10 ms,  
A
I
A
Device  
NVBG060N090SC1  
Package  
Shipping  
p
DSC  
R
= 4.7 W  
G
D2PAK−7L  
800 /  
Tape & Reel  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Source Current (Body Diode)  
I
S
21  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
162  
mJ  
Energy (I  
= 18 A, L = 1 mH) (Note 5)  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/8″ from case for 5 s)  
T
L
245  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
3. Repetitive rating, limited by max junction temperature.  
4. Peak current might be limited by transconductance.  
5. EAS of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A,  
J
AS  
V
DD  
= 100 V, V = 15 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NVBG060N090SC1/D  
 
12345678

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