Datasheet > NVBG095N065SC1

NVBG095N065SC1

更新时间： 2024-11-07 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	211K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, D2PAK−7L

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NVBG095N065SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 70 mohm, 650ꢀV,

M2, D2PAK-7L

MAX

I MAX

(BR)DSS

DS(ON)

650 V

105 mꢀ @ 18 V

30 A

Drain (TAB)

NVBG095N065SC1

Features

• Typ. R

= 70 mꢀ @ V = 18 V

= 95 mꢀ @ V = 15 V

Gate (Pin 1)

DS(on)

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 50 nC)

G(tot)

Driver Source (Pin 2)

• Low Output Capacitance (C = 89 pF)

oss

Power Source (Pins 3, 4, 5, 6, 7)

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

N−CHANNEL MOSFET

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

D2PAK−7L

CASE 418BJ

DSS

Gate−to−Source Voltage

−8/+22

−5/+18

MARKING DIAGRAM

Recommended Operation Val-

ues of Gate − Source Voltage

< 175°C

= 25°C

GSop

BG095N

065SC1

AYWWZZ

Continuous Drain

Current (Note 2)

Steady

State

110

Power Dissipation

(Note 2)

BG095N065SC1 = Specific Device Code

Continuous Drain

Current (Notes 1, 2)

Steady

State

= 100°C

= Assembly Location

= Year

Power Dissipation

(Notes 1, 2)

WW = Work Week

= Lot Traceability

Pulsed Drain Current (Note 3)

= 25°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

+175

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I = 9.4 A , L = 1 mH) (Note 4)

Maximum Lead Temperature for Soldering, 1/8″

from Case for 10 Seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. Repetitive rating, limited by max junction temperature.

4. E of 44 mJ is based on starting T = 25°C; L = 1 mH, I = 9.4 A,

= 50 V, V = 18 V.

Publication Order Number:

August, 2022 − Rev. 0

NVBG095N065SC1/D

12 3 4 5 6 7 8

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