Datasheet > NVC3S5A51PLZ

NVC3S5A51PLZ

更新时间： 2024-09-17 01:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	576K
描述
Power MOSFET

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NVC3S5A51PLZ 数据手册

NVC3S5A51PLZ

Power MOSFET

60V, 250mΩ, 1.8A, P-Channel

www.onsemi.com

Automotive Power MOSFET designed to minimize gate charge and low on

resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for

automotive applications.

Features

(on) Max

D Max

DSS

 4V drive

 High ESD protection

 Low On-Resistance

250mΩ@ 10V

330mΩ@ 4.5V

350mΩ@ 4.0V

60V

1.8A

 AEC-Q101 qualified and PPAP capable

 Pb-Free, Halogen Free and RoHS compliance

ELECTRICAL CONNECTION

P-Channel

Typical Applications

 Reverse Battery Protection

 High Side Load Switch

 Automotive Body Controllers

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)

1 : Gate

2 : Source

3 : Drain

Parameter

Symbol

Value

Unit

Drain to Source Voltage

60

20

DSS

GSS

Gate to Source Voltage

Drain Current (DC) (Note 2)

Drain Current (DC) (Note 3)

Drain Current (Pulse)

PW  10s, duty cycle  1%

Power Dissipation

Ta=25C(Note 2)

Power Dissipation

Ta=25C(Note 3)

Junction Temperature and

1.8

1.7

MARKING

C

7.2

1.2

0.8

CPH3

Tj, Tstg

55 to +175

Storage Temperature

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

THERMAL RESISTANCE RATINGS

Parameter

(Note 2)

(Note 3)

Symbol

Value

Unit

125

182

C/W

JA

Junction to Ambient

C/W

Note 2 : Surface mounted on ceramic substrate(900mm²

 0.8mm).

Note 3 : Surface mounted on FR4 board using a 92mm², 1 oz. Cu pad.

January 2016 - Rev. 0

Publication Order Number :

NVC3S5A51PLZ/D

12 3 4 5 6

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