Datasheet > NVCR4LS2D5N10MCA

NVCR4LS2D5N10MCA

更新时间： 2024-09-17 11:14:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	230K
描述
Power MOSFET, N-Channel, 100 V, 2.5 mΩ, Bare Die

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NVCR4LS2D5N10MCA 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, N-Channel

100 V, 2.5 mW

NVCR4LS2D5N10MCA

Features

• Typical R

• Typical Q

= 1.9 mꢀ at V = 10 V

DS(on)

= 73 nC at V = 10 V

g(tot)

• AEC−Q101 Qualified

• RoHS Compliant

ORDERING INFORMATION

DIMENSION (mm)

Die Size

Device

Package

5080 × 3683

NVCR4LS2D5N10MCA

Wafer

Sawn on Foil

Die Size (Sawn)

Source Attach Area

Gate Attach Area

Die Thickness

5060 15 × 3663 15

(4448.9 × 1639.6) × 2

390 × 540

RECOMMENDED STORAGE CONDITIONS

Temperature

22 to 28°C

101.6 19.1

40 to 66%

Gate and Source: AlSiCu

Drain: Ti−NiV−Ag (back side of die)

Passivation: Polyimide

Wafer Diameter: 8 inch

Wafer Sawn on UV Tape

Bad Dice Identified in Inking

Gross Die Counts: 1325

The Chip is 100% Probed to Meet the Conditions and Limits

Specified at T = 25°C.

Symbol

Parameter

Condition

I = 250 ꢁ A, V = 0 V

Min

100

−

Typ

−

Max

−

Unit

Drain to Source Breakdown Voltage

Drain to Source Leakage Current

Gate to Source Leakage Current

Gate to Source Threshold Voltage

Bare Die Drain to Source On Resistance

Source to Drain Diode Voltage

DSS

= 100 V, V = 0 V

−

ꢁ A

DSS

20 V, V = 0 V

−

100

4.0

2.5

1.2

−

GSS

GS(th)

= V , I = 250 ꢁ A

2.0

−

= 5 A, V = 10 V

1.9

−

mꢀ

DS(on)

= 5 A, V = 0 V

−

Single Pulse Drain−to−Source

Avalanche Energy

L = 50 ꢁ H, I = 80 A

160

−

*Accurate R

test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max R

DS(on)

specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R

performance depends on the Source wire/ribbon bonding layout.

Publication Order Number:

NVCR4LS2D5N10MCA−DIE/D

June, 2022 − Rev. 0

12 3 4 5 6

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