Datasheet > NVCW4LS001N08HA

NVCW4LS001N08HA

更新时间： 2024-09-17 11:13:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	119K
描述
Power MOSFET, N-Channel, 80 V, 1.0 mΩ, Bare Die

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NVCW4LS001N08HA 数据手册

DIE DATA SHEET

www.onsemi.com

MOSFET – Power,

N-Channel

80 V, 1.0 mW

NVCW4LS001N08HA

Features

• Typical R

• Typical Q

= 0.82 mW at V = 10 V

DS(on)

= 166 nC at V = 10 V

g(tot)

• AEC−Q101 Qualified

• RoHS Compliant

ORDERING INFORMATION

Device

Package

NVCW4LS001N08HA

Unsawn Wafer on Ring

Frame

DIMENSION (mm)

Die Size

6604 x 4445

Scribe Width

RECOMMENDED STORAGE CONDITIONS

Source Attach Area

Gate Attach Area

Die Thickness

(6362 x 2059) x 2

330 x 600

101.6

Temperature

22 to 28°C

40% to 66%

Gate and Source : AlCu

Drain : Ti−Ni−Ag (back side of die)

Passivation : Polyimide

Wafer Diameter : 8 inch

Wafer Unsawn on UV Tape

Bad dice identified in Inking

Gross Die Count : 806

ELECTRICAL CHARACTERISTICS

The Chip is 100% Probed to Meet the Conditions and Limits Specified at T = 25°C

Symbol

Parameter

Condition

= 250 mA, V = 0 V

Min.

Typ.

−

Max.

−

Unit

Drain to Source Breakdown Voltage

Drain to Source Leakage Current

Gate to Source Leakage Current

Gate to Source Threshold Voltage

Bare Die Drain to Source On Resistance

−

DSS

= 80 V, V = 0 V

−

DSS

GSS

= 20 V, V = 0 V

−

100

4.0

1.0

= V , I = 650 mA

2.0

−

GS(th)

= 50 A, V = 10 V

0.82

DS(on)

*Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max RDS(on)

specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die RDS(on)

performance depends on the Source wire/ribbon bonding layout.

Publication Order Number:

NVCW4LS001N08HA/D

June, 2022 − Rev. 0

12 3 4 5 6

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