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NVBLS1D7N10MCTXG PDF预览

NVBLS1D7N10MCTXG

更新时间: 2024-09-17 11:16:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 266K
描述
N-Channel PowerTrench® MOSFET, 100V, 300A, 1.5mΩ

NVBLS1D7N10MCTXG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, TOLL  
100 V, 1.8 mW, 265 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
100 V  
1.8 mW @ 10 V  
265 A  
D
NVBLS1D7N10MC  
Features  
Low R  
G
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
S
AECQ101 Qualified and PPAP Capable  
Lowers Switching Noise/EMI  
NCHANNEL MOSFET  
These Devices are PbFree and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
100  
20  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
265  
187  
303  
152  
32.4  
22.9  
4.5  
A
HPSOF8L  
CASE 100CU  
C
D
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
MARKING DIAGRAM  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
AYWWZZ  
1D7N10  
MC  
T = 100°C  
A
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
2.3  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
900  
A
A
p
DM  
A = Assembly Location  
Y = Year  
WW = Work Week  
ZZ = Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
J
55 to  
+175  
°C  
stg  
Source Current (Body Diode)  
I
S
233  
A
1D7N10MC = Specific Device Code  
Single Pulse DraintoSource Avalanche  
E
AS  
2716  
mJ  
Energy (I  
= 23.7 A)  
L(pk)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.49  
33  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2022 Rev. 2  
NVBLS1D7N10MC/D  
 

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