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NVC040N120SC1 PDF预览

NVC040N120SC1

更新时间: 2024-09-17 11:14:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 175K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, Bare Die

NVC040N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 40 mohm,  
1200ꢀV, M1, Bare Die  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
1200 V  
56 m@ 20 V  
60 A  
NCHANNEL MOSFET  
NVC040N120SC1  
Description  
D
Silicon Carbide (SiC) MOSFET uses a completely new technology  
that provide superior switching performance and higher reliability  
compared to Silicon. In addition, the low ON resistance and compact  
chip size ensure low capacitance and gate charge. Consequently,  
system benefits include highest efficiency, faster operation frequency,  
increased power density, reduced EMI, and reduced system size.  
G
S
DIE DIAGRAM  
G
Features  
1200 V @ T = 175°C  
J
Typ R  
= 40 mat V = 20 V, I = 40 A  
GS D  
DS(on)  
High Speed Switching with Low Capacitance  
100% UIL Tested  
AECQ101 Qualified and PPAP Capable  
This Device is Halide Free and RoHS Compliant with exemption 7a,  
PbFree 2LI (on second level interconnection)  
Applications  
S1  
S3  
Automotive Traction Inverter  
Automotive DCDC Converter for EV/HEV  
S2  
Die Information  
S Wafer Diameter  
6 inch  
S Die Size  
4,270 x 3,560 m  
S Metallization  
Top  
Ti/TiN/Al  
5 m  
Back  
Ti/NiV/Ag  
S Die Thickness  
S Gate Pad Size  
Typ. 200 m  
604 x 415 m  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2022 Rev. 1  
NVC040N120SC1/D  

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