Datasheet > NVC080N120SC1

NVC080N120SC1

更新时间： 2024-11-10 11:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	227K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die

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NVC080N120SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 80 mohm,

1200ꢀV, M1, Bare Die

MAX

I MAX

(BR)DSS

DS(on)

1200 V

110 mW @ 20 V

31 A

N−CHANNEL MOSFET

NVC080N120SC1

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

DIE DIAGRAM

• 1200 V @ T = 175°C

• Typ R

= 80 mW at V = 20 V, I = 20 A

GS D

DS(on)

• High Speed Switching with Low Capacitance

• 100% UIL Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Applications

• Automotive Traction Inverter

• Automotive DC−DC Converter for EV/HEV

Die Information

S Wafer Diameter

6 inch

S Die Size

2,900 x 2,900 mm

S Metallization

⋅ Top

Ti/AlSiCu

Ti/V/Ni/Ag

5 mm

⋅ Back

S Die Thickness

S Gate Pad Size

Typ. 200 mm

632 x 242.5 mm

Publication Order Number:

April, 2023 − Rev. 2

NVC080N120SC1/D

12 3 4 5 6 7 8

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