生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
数据输入模式: | SERIAL | 接口集成电路类型: | VACUUM FLUORESCENT DISPLAY DRIVER |
JESD-30 代码: | S-PBGA-B4 | 长度: | 1.118 mm |
复用显示功能: | NO | 功能数量: | 1 |
端子数量: | 4 | 最高工作温度: | 140 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 0.742 mm | 表面贴装: | YES |
温度等级: | AUTOMOTIVE | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 1.118 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NVC3S5A51PLZ | ONSEMI |
获取价格 |
Power MOSFET | |
NVC3S5A51PLZ_16 | ONSEMI |
获取价格 |
Power MOSFET | |
NVC3S5A51PLZT1G | ONSEMI |
获取价格 |
Power MOSFET | |
NVC6S5A354PLZ | ONSEMI |
获取价格 |
P-Channel Power MOSFET | |
NVC6S5A354PLZT1G | ONSEMI |
获取价格 |
P-Channel Power MOSFET | |
NVC6S5A444NLZT1G | ONSEMI |
获取价格 |
功率 MOSFET,60 V,78 mΩ,4.5 A,单 N 沟道 | |
NVCR4LS004N10MCA | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, 100 V, 4.0 mΩ, Bare | |
NVCR4LS1D3N08M7A | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, 80 V, 1.27 mΩ, Bare | |
NVCR4LS1D4N10MCA | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, 100 V, 1.4 mΩ, Bare | |
NVCR4LS1D6N10MCA | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, 100 V, 1.6 mΩ, Bare |