Datasheet > NVBG110N65S3F

NVBG110N65S3F

更新时间： 2024-11-10 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	230K
描述
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, D2PAK 7 lead

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NVBG110N65S3F 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, D2PAK-7L

650 V, 110 mW, 30 A

MAX

I MAX

(BR)DSS

DS(ON)

650 V

110 mW @ 10 V

30 A

Drain (TAB)

NVBG110N65S3F

Description

Gate (Pin 1)

SUPERFET III MOSFET is onsemi’s brand−new high voltage

super−junction (SJ) MOSFET family that is utilizing charge balance

technology for outstanding low on−resistance and lower gate charge

performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Driver Source (Pin 2)

Power Source (Pins 3, 4, 5, 6, 7)

N−CHANNEL MOSFET

Consequently, SUPERFET III MOSFET is very suitable for the

various power system for miniaturization and higher efficiency.

SUPERFET III FRFET MOSFET’s optimized reverse recovery

performance of body diode can remove additional component and

improve system reliability.

In addition, the D2PAK 7 lead package offers Kelvin sense. This

allows higher switching speeds and gives designers the ability to

reduce the overall application footprint.

D2PAK−7L

CASE 418BJ

Features

• 700 V @ T = 150°C

• Typ. R

= 93 mW

DS(on)

MARKING DIAGRAM

• Ultra Low Gate Charge (Typ. Q = 58 nC)

• Low Effective Output Capacitance (Typ. C

• 100% Avalanche Tested

= 553 pF)

oss(eff.)

VBG110

N65S3F

AYWWZZ

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

VBG110N65S3F = Specific Device Code

Typical Applications

= Assembly Location

= Year

• Automotive On Board Charger

• Automotive DC/DC Converter for BEV

WW = Work Week

= Lot Traceability

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

May, 2022 − Rev. 0

NVBG110N65S3F/D

12 3 4 5 6 7...10

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