Datasheet > NVBLS1D1N08H

NVBLS1D1N08H

更新时间： 2024-11-07 11:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	443K
描述
MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVBLS1D1N08H 数据手册

MOSFET - Power, Single

N-Channel, TOLL

80 V, 1.05 mW, 351 A

NVBLS1D1N08H

Features

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• AEC−Q101 Qualified and PPAP Capable

• Lowers Switching Noise/EMI

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free and are RoHS Compliant

80 V

1.05 mW @ 10 V

351 A

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

= 25°C

= 100°C

= 25°C

351

248

311

156

Current R

N−CHANNEL MOSFET

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

4.2

2.1

900

(Notes 1, 2)

TOLL

T = 100°C

CASE 100CU

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

MARKING DIAGRAM

Source Current (Body Diode)

259

Single Pulse Drain−to−Source Avalanche

1580

AYWWZZ

NVBLS

Energy (I

= 31.9 A)

L(pk)

1D1N08H

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NVBLS1D1N08H = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.48

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

35.8

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 2

NVBLS1D1N08H/D

12 3 4 5 6 7

中文翻译

下载PDF

与NVBLS1D1N08H相关器件

型号	品牌	获取价格	描述	数据表
NVBLS1D5N10MCTXG	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 300A, 1.
NVBLS1D7N08H	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, TOLL 80 V,
NVBLS1D7N10MCTXG	ONSEMI	获取价格	N-Channel PowerTrench® MOSFET, 100V, 300A, 1.
NVBLS4D0N15MC	ONSEMI	获取价格	Single N-Channel, 150 V, 4.4 mΩ, 187 A
NVC040N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVC080N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 40 m
NVC1001	ETC	获取价格	4 Ch Color Video Display ASIC Solution for Multiplexer
NVC160N120SC1	ONSEMI	获取价格	Silicon Carbide MOSFET, N‐Channel, 1200 V, 16
NVC299HT1	ONSEMI	获取价格	VACUUM FLUOR DISPLAY DRIVER, PBGA4, FLIP-CHIP, 4 PIN
NVC299HW1	ONSEMI	获取价格	VACUUM FLUOR DISPLAY DRIVER, PBGA4, FLIP-CHIP, 4 PIN

与NVBLS1D1N08H相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

NVBLS1D1N08H

NVBLS1D1N08H 数据手册

与NVBLS1D1N08H相关器件

与NVBLS1D1N08H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVBLS1D1N08H

NVBLS1D1N08H 数据手册

与NVBLS1D1N08H相关器件

与NVBLS1D1N08H相关文章

您还可以找

您在本页遇到什么问题？