DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, TOLL
100 V, 1.5 mW, 300 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
1.5 mW @ 10 V
300 A
D
NVBLS1D5N10MC
Features
• Low R
G
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S
• AEC−Q101 Qualified and PPAP Capable
• Lowers Switching Noise/EMI
N−CHANNEL MOSFET
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
300
214
331
165
35.5
25.1
4.5
A
H−PSOF8L
CASE 100CU
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
MARKING DIAGRAM
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
AYWWZZ
1D5N10
MC
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
900
A
A
p
DM
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
Source Current (Body Diode)
I
S
255
A
1D5N10MC = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
1652
mJ
Energy (I
= 27.1 A)
L(pk)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.45
33
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022 − Rev. 2
NVBLS1D5N10MC/D