5秒后页面跳转
捷配首页

Datasheet > NVBG080N120SC1
NVBG080N120SC1 PDF预览

NVBG080N120SC1

更新时间： 2024-11-07 11:15:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 317K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L

阅读下载

中文翻译

获取价格

NVBG080N120SC1 数据手册

 浏览型号NVBG080N120SC1的Datasheet PDF文件第2页浏览型号NVBG080N120SC1的Datasheet PDF文件第3页浏览型号NVBG080N120SC1的Datasheet PDF文件第4页浏览型号NVBG080N120SC1的Datasheet PDF文件第5页浏览型号NVBG080N120SC1的Datasheet PDF文件第6页浏览型号NVBG080N120SC1的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 80 mohm,  
1200ꢀV, M1, D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
110 mW @ 20 V  
30 A  
Drain (TAB)  
NVBG080N120SC1  
Features  
Gate (Pin 1)  
• Typ. R  
= 80 mW  
DS(on)  
• Ultra Low Gate Charge (Typ. Q  
= 56 nC)  
G(tot)  
• Low Effective Output Capacitance (Typ. C = 79 pF)  
Driver Source (Pin 2)  
oss  
• 100% Avalanche Tested  
Power Source (Pins 3, 4, 5, 6, 7)  
• AEC−Q101 Qualified and PPAP Capable  
N−CHANNEL MOSFET  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D2PAK−7L  
CASE 418BJ  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
1200  
V
V
Gate−to−Source Voltage  
V
GS  
−15/+25  
MARKING DIAGRAM  
Recommended Operation  
Values of Gate−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
−5/+20  
V
C
AYWWZZ  
NVBG  
080120SC1  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
D
30  
A
C
Power Dissipation  
(Note 1)  
P
D
179  
21  
W
A
A
Y
= Assembly Location  
= Year  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
WW = Work Week  
ZZ = Lot Traceability  
NVBG080120SC1 = Specific Device Code  
Power Dissipation  
(Note 1)  
P
89  
W
D
Pulsed Drain Current (Note 2)  
T
= 25°C  
I
110  
132  
A
A
C
DM  
Single Pulse Surge  
Drain Current  
Capability  
T
C
= 25°C, t = 10 ms,  
I
DSC  
p
ORDERING INFORMATION  
R
= 4.7 W  
G
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
NVBG080N120SC1  
D2PAK−7L  
800 /  
Tape & Reel  
Source Current (Body Diode)  
I
S
18  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single Pulse Drain−to−Source Avalanche  
E
171  
mJ  
AS  
Energy (I = 18.5 A , L = 1 mH) (Note 3)  
L
pk  
Maximum Lead Temperature for Soldering,  
1/8″ from Case for 10 Seconds  
T
300  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A,  
AS  
DD  
J
AS  
V
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NVBG080N120SC1/D  
 
12345678

中文翻译

下载PDF

与NVBG080N120SC1相关器件

型号 品牌 获取价格 描述 数据表
NVBG089N65S3F ONSEMI

获取价格

 		Single N-Channel Power MOSFET SUPERFET® III,
NVBG095N065SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 70 m
NVBG095N65S3F ONSEMI

获取价格

 		Single N-Channel Power MOSFET SUPERFET® III,
NVBG110N65S3F ONSEMI

获取价格

 		Single N-Channel Power MOSFET SUPERFET® III,
NVBG150N65S3F ONSEMI

获取价格

 		Single N-Channel Power MOSFET SUPERFET® III,
NVBG160N120SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVBG190N65S3F ONSEMI

获取价格

 		Single N-Channel Power MOSFET SUPERFET® III,
NVBGS1D2N08H ONSEMI

获取价格

 		Power MOSFET, 80 V, 1.2 mΩ, 353 A, Single N−C
NVBGS4D1N15MC ONSEMI

获取价格

 		MOSFET - Single N-Channel 150 V, 4.1 mΩ, 185
NVBGS6D5N15MC ONSEMI

获取价格

 		MOSFET - Power, Single N-Channel, D2PAK7 150

与NVBG080N120SC1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证