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NVBG020N090SC1

更新时间： 2024-09-17 11:16:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 320K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900V, M2, D2PAK−7L

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NVBG020N090SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 20 mohm, 900 V,  
M2, D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
900 V  
28 mW @ 15 V  
112 A  
NVBG020N090SC1  
Drain (TAB)  
Features  
• Typ. R  
• Typ. R  
= 20 mW @ V = 15 V  
DS(on)  
DS(on)  
GS  
= 16 mW @ V = 18 V  
GS  
Gate (Pin 1)  
• Ultra Low Gate Charge (typ. Q  
= 200 nC)  
G(tot)  
• Low Effective Output Capacitance (typ. C = 295 pF)  
oss  
Driver Source (Pin 2)  
• 100% Avalanche Tested  
Power Source (Pins 3, 4, 5, 6, 7)  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
N−CHANNEL MOSFET  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
D2PAK−7L  
CASE 418BJ  
V
DSS  
900  
V
V
V
Gate−to−Source Voltage  
V
GS  
+22/−8  
+15/−5  
Recommended Operation  
Values of Gate−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
C
MARKING DIAGRAM  
Steady  
State  
T
C
Continuous Drain  
Current R  
I
D
112  
A
q
JC  
(Note 2)  
AYWWZZ  
NVBG  
020N090SC1  
Power Dissipation  
P
I
477  
9.8  
W
A
D
R
(Note 2)  
q
JC  
Steady  
State  
T = 25°C  
A
Continuous Drain  
Current R  
D
q
JA  
(Notes 1, 2)  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ = Lot Traceability  
Power Dissipation  
P
D
3.7  
W
R
(Notes 1, 2)  
q
JA  
Pulsed Drain Current (Note 3)  
T = 25°C  
I
448  
854  
A
A
A
DM  
NVBG020N090SC1 = Specific Device Code  
Single Pulse Surge  
Drain Current  
Capability (Note 4)  
T = 25°C, t = 10 ms,  
A
I
DSC  
p
R
= 4.7 W  
G
ORDERING INFORMATION  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
†
Device  
Package  
Shipping  
Source Current (Body Diode)  
I
S
148  
264  
A
NVBG020N090SC1  
D2PAK−7L  
800 /  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Tape & Reel  
Energy (I = 23 A , L = 1 mH) (Note 5)  
L
pk  
Maximum Lead Temperature for Soldering,  
T
245  
°C  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1/8″ from Case for 10 Seconds  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.  
2. The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions noted.  
3. Repetitive rating, limited by max junction temperature.  
4. Peak current might be limited by transconductance.  
5. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,  
AS  
DD  
J
AS  
V
= 100 V, V = 15 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 3  
NVBG020N090SC1/D  
 
12345678

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