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NVBG040N120SC1 PDF预览

NVBG040N120SC1

更新时间： 2024-09-17 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 327K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L

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NVBG040N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 40 mohm,  
1200ꢀV, M1, D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
56 mW @ 20 V  
60 A  
Drain (TAB)  
NVBG040N120SC1  
Features  
Gate (Pin 1)  
• Typ. R  
= 40 mW  
DS(on)  
• Ultra Low Gate Charge (Typ. Q  
= 106 nC)  
G(tot)  
• Low Effective Output Capacitance (Typ. C = 139 pF)  
oss  
Driver Source (Pin 2)  
• 100% Avalanche Tested  
Power Source (Pins 3, 4, 5, 6, 7)  
• AEC−Q101 Qualified and PPAP Capable  
N−CHANNEL MOSFET  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
D2PAK−7L  
CASE 418BJ  
V
DSS  
Gate−to−Source Voltage  
V
+25/−15  
+20/−5  
V
GS  
MARKING DIAGRAM  
Recommended Operation Values  
of Gate−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
V
C
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
60  
357  
43  
A
W
A
AYWWZZ  
NVBG  
040120SC1  
C
D
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ = Lot Traceability  
Power Dissipation  
(Note 1)  
P
D
178  
W
NVBG040120SC1 = Specific Device Code  
Pulsed Drain Current (Note 2)  
T = 25°C  
I
240  
416  
A
A
A
DM  
Single Pulse Surge  
Drain Current  
Capability  
T = 25°C, t = 10 ms,  
A
I
DSC  
p
R
= 4.7 W  
G
ORDERING INFORMATION  
†
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
Device  
Package  
Shipping  
+175  
NVBG040N120SC1  
D2PAK−7L  
800 /  
Source Current (Body Diode)  
I
S
36  
A
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
E
578  
mJ  
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Energy (I = 34 A , L = 1 mH) (Note 3)  
L
pk  
Maximum Lead Temperature for Soldering,  
1/8″ from Case for 10 Seconds  
T
300  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. E of 578 mJ is based on starting T = 25°C; L = 1 mH, I = 34 A,  
AS  
DD  
J
AS  
V
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 2  
NVBG040N120SC1/D  
 
12345678

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