Datasheet > NVBG022N120M3S

NVBG022N120M3S

更新时间： 2024-11-07 11:15:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	325K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

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NVBG022N120M3S 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

22ꢀmohm, 1200ꢀV, M3S,

D²PAK-7L

MAX

I MAX

(BR)DSS

DS(ON)

1200 V

30 mꢀ @ 18 V

72 A

Drain (TAB)

NVBG022N120M3S

Features

Gate (Pin 1)

• Typ. R

= 22 mꢀ @ V = 18 V

DS(on)

• Ultra Low Gate Charge (Q

= 142 nC)

G(tot)

Driver Source (Pin 2)

Power Source (Pins 3, 4, 5, 6, 7)

• High Speed Switching with Low Capacitance (C = 146 pF)

oss

• 100% Avalanche Tested

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• These Devices are RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

D PAK−7L

DSS

CASE 418BJ

Gate−to−Source Voltage

−10/+22

−3/+18

MARKING DIAGRAM

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Notes 2, 3)

Steady

State

234

BG022N

120M3S

AYWWZZ

Power Dissipation

(Note 2)

Continuous Drain

Current (Notes 2, 3)

Steady

State

= 100°C

BG022N120M3S = Specific Device Code

= Assembly Location

= Year

Power Dissipation

(Note 2)

117

171

WW = Work Week

= Lot Traceability

Pulsed Drain Current

(Note 4)

= 25°C

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

ORDERING INFORMATION

+175

Device

Package

Shipping

Source Current (Body Diode)

= 25°C, V = −3 V (Note 2)

NVBG022N120M3S

D PAK−7L

800 / Tape

& Reel

Single Pulse Drain−to−Source Avalanche

Energy (I = 23.1 A, L = 1 mH) (Note 5)

267

270

°C

L(pk)

Maximum Temperature for Soldering (10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. The maximium current rating is based on typical R

performance.

DS(on)

4. Repetitive rating, limited by max junction temperature.

5. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,

= 100 V, V = 18 V.

Publication Order Number:

June, 2023 − Rev. 2

NVBG022N120M3S/D

12 3 4 5 6 7 8

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与NVBG022N120M3S相关器件

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