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NVBG020N120SC1

更新时间： 2024-11-07 11:11:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 342K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

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NVBG020N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 20 mohm,  
1200ꢀV, M1, D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
28 mW @ 20 V  
98 A  
Drain  
(TAB)  
NVBG020N120SC1  
Features  
• Typ. R  
Gate  
(Pin 1)  
= 20 mW  
DS(on)  
• Ultra Low Gate Charge (typ. Q  
= 220 nC)  
G(tot)  
Driver  
Source  
(Pin 2)  
• Low Effective Output Capacitance (typ. C = 258 pF)  
oss  
Power Source  
(Pin 3, 4, 5, 6, 7)  
• 100% Avalanche Tested  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC−DC Converter for EV/HEV  
D2PAK−7L  
CASE 418BJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
MARKING DIAGRAM  
V
DSS  
Gate−to−Source Voltage  
V
−15/+25  
−5/+20  
V
GS  
AYWWZZ  
NVBG  
020120SC1  
Recommended Operation Val-  
ues of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
V
C
Continuous Drain  
Current (Note 2)  
Steady  
State  
T
I
98  
A
W
A
C
D
A
Y
= Assembly Location  
= Year  
Power Dissipation  
(Note 2)  
P
468  
8.6  
3.7  
392  
807  
D
WW = Work Week  
Continuous Drain  
Current (Notes 1, 2)  
Steady  
State  
T = 25°C  
I
A
D
ZZ  
= Lot Traceability  
NVBG020120SC1 = Specific Device Code  
Power Dissipation  
(Notes 1, 2)  
P
W
A
D
ORDERING INFORMATION  
Pulsed Drain Current  
(Note 3)  
T = 25°C  
I
DM  
A
†
Device  
Package  
Shipping  
Single Pulse Surge  
Drain Current  
Capability  
T = 25°C, t = 10 ms,  
I
A
A
p
DSC  
NVBG020N120SC1  
D2PAK−7L  
800 /  
R
= 4.7 W  
G
Tape & Reel  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
+175  
Source Current (Body Diode)  
I
S
46  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
264  
mJ  
Energy (I  
= 23 A, L = 1 mH) (Note 4)  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/8″ from case for 5 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
3. Repetitive rating, limited by max junction temperature.  
4. EAS of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,  
J
AS  
V
DD  
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
April, 2022 − Rev. 5  
NVBG020N120SC1/D  
 
1234567

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