NUP4301MR6T1/D

更新时间： 2024-09-13 23:55:07

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	48K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

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NUP4301MR6T1/D 数据手册

NUP4301MR6T1

Low Capacitance Diode

Array for ESD Protection in

Four Data Lines

NUP4301MR6T1 is a MicroIntegration device designed to

provide protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

http://onsemi.com

PIN CONFIGURATION

AND SCHEMATIC

Features

• Low Capacitance (1.5 pf Maximum Between I/O Lines)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

Machine Model = Class C

I/O 1

6 I/O

5 V

Human Body Model = Class 3B

• Protection for IEC61000-4-2 (Level 4)

8.0 kV (Contact)

4 I/O

1/O 3

15 kV (Air)

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

• Direct the Transient to Either Positive Side or to the Ground

MARKING DIAGRAM

Applications

• USB 1.1 and 2.0 Data Line Protection

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

TSOP-6

CASE 318F

PLASTIC

64 = Specific Device Code

= Date Code

• Microcontroller Input Protection

• Base Stations

• I C Bus Protection

ORDERING INFORMATION

Device

Package

Shipping

NUP4301MR6T1 TSOP-6

3000/Tape & Reel

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

mAdc

Forward Current

200

500

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

RRM

Average Rectified Forward

Current (Note 1)

715

F(AV)

(averaged over any 20 ms period)

Repetitive Peak Forward Current

450

FRM

Non-Repetitive Peak Forward Current

FSM

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

1. FR-5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

February, 2003 - Rev. 2

NUP4301MR6T1/D

12 3 4

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